Meaning
Proportional reduction of the physical dimensions of integrated circuit features through advanced photolithography techniques allows more transistors to fit on a single silicon die. Implementing a lithography shrink reduces the overall chip area and decreases the power consumption per transistor. This scaling process has driven the multi-decade advancement of semiconductor performance.
Process Scaling
Moving to a smaller manufacturing node requires using shorter wavelengths of light or advanced multi-patterning techniques. Extreme ultraviolet lithography allows the patterning of features down to a few nanometers with high fidelity. This reduction in feature size enables faster switching speeds because the transistor gate lengths are shorter.
The resulting chips offer higher processing power without a corresponding increase in physical size.
Physical Limitation
Scaling eventually encounters hard physical barriers such as quantum tunneling and increased leakage current. At extremely small dimensions, the gate oxide becomes too thin to prevent electrons from escaping, which increases static power consumption. Material changes, such as high-k dielectrics and metal gates, must be introduced to combat these subatomic effects.
These engineering innovations allow scaling to continue past what traditional silicon could support.
Economic Consequence
Shrinking the layout of an existing processor allows more dies to be harvested from each silicon wafer. This change increases the yield and reduces the manufacturing cost per chip once the new process matures. High initial capital costs for advanced lithography equipment, however, restrict these advanced manufacturing techniques to a small number of leading-edge foundries.
Balancing these development costs against the performance benefits dictates when a product moves to a smaller node.