Ferroelectric RAM

Polarization State

Data remains stored in the orientation of the dipole even when the electric field is removed. Applying a voltage to the cell forces the central ion into one of two stable positions. Because the state is physical rather than trapped charge, it is highly resistant to magnetic fields and ionizing radiation.

This mechanical stability ensures that the memory retains information even in harsh industrial environments where electromagnetic interference is common.

Write Speed

Cycle times for these memory modules often match the speed of standard static ram. A write operation completes in tens of nanoseconds, which is significantly faster than the milliseconds required for flash memory.

Energy Efficiency

Lower operating voltages reduce the power consumption of the memory array during active use. The absence of a charge pump removes the current spikes typically seen when writing to other non-volatile types.