Meaning
Conduction mechanisms in insulating and semiconducting materials describe the electrical leakage through dielectric films under high electric fields. In semiconductor devices, poole-frenkel emission occurs when thermal energy assists the release of trapped electrons into the conduction band under the influence of an applied field. This process is a common source of leakage current in thin-film transistors and capacitors.
Leakage Current
Dielectric reliability depends on keeping leakage currents to a minimum during standard operation. When high voltage is applied to a thin oxide layer, the emission rate of trapped charge carriers increases. This leakage can drain batteries and generate unwanted heat.
Field Dependence
Voltage stress lowers the potential barrier of the electron traps within the insulator. The electric field alters the shape of the potential well, making it easier for electrons to escape. This action causes the current to rise exponentially with the square root of the electric field.
Thermal Sensitivity
Device temperature strongly influences this conduction process because thermal fluctuations provide the energy needed for electron emission. Standard laboratory testing at multiple temperature levels helps distinguish this mechanism from other conduction processes like Fowler-Nordheim tunneling. System engineers analyze these measurements to predict device behavior at high operating temperatures where thermal runaway is a risk.
