Physical silicon degradation shifts internal relaxation oscillator frequencies by shifting gate threshold voltages, widening wireless sleep receiver guard windows.
Atomic layer deposition alumina-nitride passivation nanolaminates hold interface trap density below 10^11 cm^-2 eV^-1, preventing high-power RF current collapse.
Silicon aging distorts internal relaxation oscillator thermal compensation curves over time, requiring dynamic runtime recalibration to prevent network failure.
Substrate dielectric degradation reduces RF transceiver link budgets over time, requiring a minimum four-decibel margin allowance during module procurement.
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